InGaAs Photodiodes
EWING, N.J., Oct. 24, 2017 — High-speed, extended InGaAs 2-μm photodiodes from Discovery Semiconductors Inc. feature high-current handling.
The devices can be used for characterizing ultra-fast, mode-locked fiber lasers at multiple wavelengths ranging from 1550 to 2100 nm. Broad operation bandwidth and high speed of the photodiode allows for acquisition of broadband radio-frequency spectra of mode-locked lasers operating at different wavelengths in the 1.55- to 2.1-μm range.
Relatively high power handling...
Discovery Semiconductors Inc.