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Model Simulates Atomic Processes in Nanomaterials

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CAMBRIDGE, Mass., March 12, 2007 -- Researchers from MIT, Georgia Institute of Technology and Ohio State University have developed a new computer modeling approach to study how materials behave under stress at the atomic level, offering insights that could help engineers design materials with an ideal balance between strength and resistance to failure. When designing materials, there is often a tradeoff between strength and ductility (resistance to breaking) -- properties that are critically important to their performance. This three-dimensional atomic simulation shows the absorption of a line defect by an existing twin...Read full article

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