MADISON, Wis. and BUFFALO, N.Y., July 10, 2017 — Using a high-yield, high-throughput fabrication method, nanometer-thin photodetectors with enhanced light absorption have been demonstrated. The photodetectors, which are based on a nanocavity interference mechanism, could enable miniaturization of optoelectronic devices, leading to performance gain without adding bulk. The research addressed two remaining challenges to the thinning of photoactive layers to the nanometer scale: how to prevent incomplete photon absorption and low quantum efficiency due to weak light-matter interaction and how to maintain single-crystalline quality in the...Read full articleRelated content from Photonics MediaARTICLESModel Guides Precise Formation of Plasmonic ComponentsUsing a real-time mathematical analysis model developed at ITMO University, scientists will now be able to manipulate the process of creating photonic and plasmonic components to produce the precise...Photonics.com 7/22/2020CMOS-Compatible Photodetector Spurs Possibilities in the Extended SWIRHigh-bandwidth germanium-tin (GeSn) photodetectors, developed by a team at Polytechnique Montréal to support CMOS-compatible technologies in the extended shortwave infrared (e-SWIR)...Photonics.com 5/27/2022Light-Powered Robot Decontaminates on Water’s SurfaceResearchers at the University of California, Riverside have devised a sustainable solution to clean contaminants in open waters. 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