GaN HEMT Epiwafers
- Model: GaN HEMT Epiwafers
- Company: NTT Advanced Technology Corp.
- Type: Wafers
- Applications: Astronomy, Biomedical/Medical, Communications, Industrial, Scientific Research, Other
- Substrates: Epitaxial growth on Si, SiC, Sapphire and GaN
- Si: 3-8 inch
- Sapphire: 2-3 inch
- SiC: 2-6 inch
- GaN: 2-4 inch
GaN HEMT epiwafers with low leakage current, enabled by our original buffer growth technique.
Over the past 10 years, NTT-AT GaN epitaxial wafers have good track record for both industrial and academic customers.
8-inch GaN on Silicon is also available with the same quality as 6-inch cases on request.
We can also provide device manufacturing and material analysis.
Tokyo Opera City Tower
3-20-2, Nishi-shinjuku
Shinjuku, Tokyo 163-1436
Japan
Phone: +1 408-474-0214