GaN HEMT Epiwafers

• Model: GaN HEMT Epiwafers
• Company: NTT Advanced Technology Corp.
• Type: Wafers
• Applications: Astronomy, Biomedical/Medical, Communications, Industrial, Scientific Research, Other
• Substrates: Epitaxial growth on Si, SiC, Sapphire and GaN
• Si: 3-8 inch
• Sapphire: 2-3 inch
• SiC: 2-6 inch
• GaN: 2-4 inch

GaN HEMT epiwafers with low leakage current, enabled by our original buffer growth technique.
Over the past 10 years, NTT-AT GaN epitaxial wafers have good track record for both industrial and academic customers.
8-inch GaN on Silicon is also available with the same quality as 6-inch cases on request.
We can also provide device manufacturing and material analysis.