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Sensors & Detectors
CMOS
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Photodiodes
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79 products
Sensors & Detectors
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Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodetector - SXUV100TF135B
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodetector - SXUV100TF135
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
Photodiode UVG20S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV63HS1
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode - AXUV20HS1
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
Photodetector - SXUV5
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Capacitance:
500 - 1500 pF
Circular Active Area:
5 mm2
Response Time:
1 - 2 nsec
Photodetector - AXUV100TF400
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector - AXUV100TF030
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector SXUV20C
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 950 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.9 - 1.7 μm
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
1.25
Light Spectrum:
SWIR
LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
5
Light Spectrum:
SWIR
InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 200 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.95 - 1.65 μm
InAs/InAsSb Superlattice Detectors
VIGO Photonics
Type:
IR
Light Spectrum:
MWIR,LWIR
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
PbS Non-Cooled Detectors: A2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1 × 10^ 11 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M Ohm Typical
Package:
TO-5
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
1KP
Sensor Width:
12.5
Sensor Height:
12.5
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
IG22- Extended InGaAs Arrays
Laser Components USA Inc.
Type:
InGaAs
Max. Resolution:
256
Scan Type & Rate:
Linear
kHz at Max. Res.:
4000
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
≥ 2.10 µm
Operating Temperature:
-40 to +50 °C
Pixel Size:
30 x 250 µm
MWIR Detection Module
VIGO Photonics
Type:
Other
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
G12230-512WB InGaAs Linear Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
0.5MP
Scan Type & Rate:
Linear
kHz at Max. Res.:
5000
Light Spectrum:
NIR,SWIR
Number of Pixels:
508
Pixel Size:
25 x 250 µm
Spectral Response Range:
0.95-2.15 µm
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics
Type:
Other
FPA0640P15F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0640P15F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
SWIR
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0320P30F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318x254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
FPA0320P30F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318×254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
1KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
200
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
1024
Pixel Size:
7.8 um x 125 µm
Spectral Response Range:
400-1000 nm
S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 200 µm
Spectral Response Range:
200-1000 nm
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