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MWIR
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Key Suppliers
Opto Diode Corporation
Laser Components USA Inc.
Hamamatsu Corporation
Teledyne DALSA, Machine Vision OEM Components
BAE Systems Sensor Solutions
Chunghwa Leading Photonics Tech Co. Ltd.
Sensors Unlimited Inc.
Electro Optical Components Inc.
IRnova AB
EVK DI Kerschhaggl GmbH
Excelitas Technologies Corp.
Infrared Materials Inc.
VIGO Photonics
Balluff Inc.
Fermionics Opto-Technology
Teledyne Judson Technologies
52 products
Sensors & Detectors
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photodiode detectors x
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Sensors & Detectors x
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
FD80 Series InGaAs Photodiode
Fermionics Opto-Technology
Type:
Photodiodes
Photosensitvie Area:
80 μm dia.
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
1KP
Sensor Width:
12.5
Sensor Height:
12.5
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 950 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.9 - 1.7 μm
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
LE / LSE Series Linear Photodiode Array
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
1024MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
1.25
Light Spectrum:
SWIR
LDB / LSB Series Linear Photodiode Arrays
Sensors Unlimited Inc.
Type:
InGaAs
Max. Resolution:
512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
5
Light Spectrum:
SWIR
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodiode UVG20S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
24 mm2
Responsivity @ 254 nm:
0.115 A/W (typical)
Rise Time:
4 µsec
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
Photodiode UVG12
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV,VIS
Circular Active Area:
13.2 mm²
Detection Wavelength Range:
193 nm - 400 nm
Quantum Efficiency:
100% in UV and Visible Regions
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodiode - AXUV63HS1
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
9
Sensor Height:
9
Light Spectrum:
XRAY
High-Speed Circular Active Area:
9 mm²
Lead-SolderingTemperature:
260 °C
Maximum Dark Current:
100 nA
Photodiode NXIR-5C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area (circular):
5 mm²
Responsivity @ 1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode - AXUV20HS1
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
XRAY
Electron Detection:
200 eV
Grid lines:
5 µm
High-Speed Circular Active Area:
5 mm Ø
InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 200 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.95 - 1.65 μm
Photodetector - AXUV100TF400
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
Photodetector - AXUV100TF030
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
10 x 10 mm
Operating/Storage Temps. in ambient environments:
-10 °C to +40 °C
Operating/Storage Temps. in nitrogen or vacuum environments:
-20 °C to +80 °C
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
Thermo-Electrically Cooled Extra Highly Linear Photodiode (xHLPD)
Discovery Semiconductors Inc.
Type:
Photodiodes
UVC Detection SiC Photodiodes
Marktech Optoelectronics Inc.
Type:
Photodiodes
UV Photodiodes
Scitec Instruments Ltd.
Type:
Photodiodes
Light Spectrum:
UV
PD4B-80-P50-2G-K
LD4B UAB
Type:
Photodiodes
Light Spectrum:
NIR,SWIR
Bandwidth:
2 GHz
Dark current:
0.01 nA
Responsivity at 1550 nm:
0.85 A/W
BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.
Type:
InGaAs
Max. Resolution:
200MP
Light Spectrum:
XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth:
200MHz
Material type:
InGaAs/Si
APD10G1
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Optical damage threshold:
up to +5 dBm
Receiver sensitivity:
–34.5 dBm
Responsivity:
10 A/W
PQS40A-L
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Bandwidth:
40 GHz
Responsivity:
0.8 A/W
Photodiodes
Hitachi High-Tech America Inc., Optical Communications
Type:
Photodiodes
Light Spectrum:
Multispectral
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
Mulit-Element Arrays
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Linear
Light Spectrum:
UV,VIS,NIR
UV-Enhanced:
A5V-35UV
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
Series 9 Avalanche Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Wavelenght Range:
750 to 930 nm
Series 6 PIN Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
1
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Sensors & Detectors Products
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