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< Sensing & Detection
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CMOS
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LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
HWK1411
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
1.6MP
Sensor Width:
11.5
Sensor Height:
8.8
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
11 bits
Chroma:
Mono or Bayer RGB
Dynamic Range:
82 db
HWK4123
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
9.4MP
Sensor Width:
4096
Sensor Height:
2300
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
12 bits @ 60 fps; 11 bits @ 120 fps
Chroma:
Mono or Bayer RGB≤≤≤≤
Dynamic Range:
83 dB
LTN4323
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
10.5MP
Sensor Width:
4432
Sensor Height:
2368
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
12 bits @ LG/HG; 11 bits @ 120 fps
Chroma:
Monochrome
Dynamic Range:
89 dB
Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
2 × 10^10 typ
Dark Resistance:
2.5 M Ohm at -25 °C typical
Delta T for TEC:
50 °C
Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics
Type:
Other
InAs/InAsSb Superlattice Detectors
VIGO Photonics
Type:
IR
Light Spectrum:
MWIR,LWIR
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
Type:
IR
Light Spectrum:
MWIR
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Material:
PbSe
IR Detector BXF-2
Opto Diode Corporation
Type:
IR
Sensor Width:
2
Sensor Height:
2
Active Element Area:
4 mm²
Element Operating Temp.:
+23 °C
Peak Sensitivity (min.):
3.6 µm
IR Detector - BXP-25E
Opto Diode Corporation
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
IR Detector - BXT2S-38T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
9 mm²
Material:
PbSe
ResponseTime:
12 µsec
IR Detector - BXT2S-68T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
PbSe Full- and Half-ball Lens Detectors: B1-5(M)-FL/L
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D* - Full-ball LENS:
1.0 × 10^11 cm Hz^.5W^-1 min
D*- Half-ball LENS:
4.5 × 10^10 cm Hz^.5W^-1 min
Dark Resistance:
1 M Ohm Typical
PbS Non-Cooled Detectors: A2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1 × 10^ 11 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M Ohm Typical
Package:
TO-5
CIS2020
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
4.2MP
Sensor Width:
2048
Sensor Height:
2048
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono
Dynamic Range:
>90 dB
CIS2521
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
5MP
Sensor Width:
2160
Sensor Height:
2560
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>83.5 dB
HWK1910
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
2.1MP
Sensor Width:
1080
Sensor Height:
1920
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
VIS,NIR
ADC Resolution:
16 bits
Chroma:
Mono or Bayer RGB
Dynamic Range:
>120 dB (UDR)
LTN4625
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
12MP
Sensor Width:
2592
Sensor Height:
4608
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono
Dynamic Range:
>88 db single frame
MST4625
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
12MP
Sensor Width:
2592
Sensor Height:
4608
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
RGB
Dynamic Range:
>88 dB
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
1KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
200
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
1024
Pixel Size:
7.8 um x 125 µm
Spectral Response Range:
400-1000 nm
S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 200 µm
Spectral Response Range:
200-1000 nm
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB50- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.9 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.1 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
MWIR Detection Module
VIGO Photonics
Type:
Other
LiTaO3 Multi Channel Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
CIS1910
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
2.1MP
Sensor Width:
1080
Sensor Height:
1920
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>88 db
InGaAs PIN Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 950 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.9 - 1.7 μm
FPA0640P15F-17-T1 or T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Package Type:
28-pin metal SDIP
Pixel Pitch:
15 μm
Quantum Efficiency:
>70%
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
LiTaO3 Single Channel Pyroelectric Detector
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Differential Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
576.5
Sensor Height:
576.5
Light Spectrum:
XRAY,Multispectral
Large, Square Active Area:
576.5 mm x 576.5 mm
Lead-SolderingTemperature:
260 °C
Min. Reverse Breakdown:
5V
Photodiode UVG5
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5
Sensor Height:
5
Light Spectrum:
UV
Active Area (Circular):
Ø 5 mm2 (typ.)
Capacitance:
2 nanofarads (nF)
Responsivity @254 nm:
0.115 A/W (typ.)
Photodetector - SXUV100TF135B
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area:
100 mm²
Low Capacitance:
260 pF
Reverse Bias Voltage:
12V
1
2
>
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