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< All Categories< Sensing & DetectionSensors & DetectorsCMOSsCMOSCCDInGaAsIRUVPhotodiodesOther

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AdTech Ceramics - Ceramic Packages 1-24 MR
Teledyne DALSA - Line Scan Leader 5/24 HP
10 products

Sensors & Detectors

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Cooled PbSe Detector: B2-8C1T
Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
  • Type: IR
  • Light Spectrum: SWIR,MWIR
  • D*: 2 × 10^10 typ
  • Dark Resistance: 2.5 M Ohm at -25 °C typical
  • Delta T for TEC: 50 °C
Photodiode NXIR-RF100C
Photodiode NXIR-RF100C
Opto Diode Corporation
  • Type: Photodiodes
  • Light Spectrum: NIR
  • Active Area: 1 mm²
  • Responsivity @1064 nm: 0.35 A/W
  • Responsivity @850 nm: 0.62 A/W
Photodiode ODD-900-001
Photodiode ODD-900-001
Opto Diode Corporation
  • Type: Photodiodes
  • Light Spectrum: VIS,NIR
  • Active Area: mm2
  • Operating Spectral Range: 730 nm - 1100 nm
  • Peak Sensitivity: 940 nm
Photodiode ODD-900-002
Photodiode ODD-900-002
Opto Diode Corporation
  • Type: Photodiodes
  • Light Spectrum: VIS,NIR
  • Active Area: 8 mm²
  • Operating Spectral Range: 400 nm - 1100 nm
  • Peak Sensitivity: 940 nm
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
  • Type: IR
  • Light Spectrum: SWIR,MWIR
  • D*: 1.4 × 10^10 cm Hz^.5W^-1 min
  • Dark Resistance-cooled model: 2.5 M Ohm typ
  • Delta T for TEC: 50 °C
S10226-10 CMOS Linear Image Sensor
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
  • Type: CMOS
  • Max. Resolution: 1KP
  • Scan Type & Rate: Linear
  • kHz at Max. Res.: 200
  • Light Spectrum: UV,VIS,NIR,SWIR
  • Number of Pixels: 1024
  • Pixel Size: 7.8 um x 125 µm
  • Spectral Response Range: 400-1000 nm
Photodiode NXIR-5C
Photodiode NXIR-5C
Opto Diode Corporation
  • Type: Photodiodes
  • Light Spectrum: NIR
  • Active Area (circular): 5 mm²
  • Responsivity @ 1064 nm: 0.35 A/W
  • Responsivity @850 nm: 0.62 A/W
Photodiode - APX 158-03-007
Photodiode - APX 158-03-007
Advanced Photonix
  • Type: InGaAs
  • Sensor Width: 3.375
  • Sensor Height: 3.375
  • Scan Type & Rate: Linear
  • Light Spectrum: VIS,NIR,SWIR
  • Breakdown Voltage: 9 (typ.) V
  • Dark Current: 3 (typ.) to 04 (max.) nA
  • Inter-Electrode Resistance (Between diagonally opposing contacts): 3 kΩ
Photodiode - APX 158-02-003
Photodiode - APX 158-02-003
Advanced Photonix
  • Type: InGaAs
  • Sensor Width: 2.25
  • Sensor Height: 2.25
  • Scan Type & Rate: Linear
  • Light Spectrum: VIS,NIR,SWIR
  • Breakdown Voltage: 9 (typ.) V
  • Dark Current: 2.5 (typ.) to 20 (max.) nA
  • Inter-Electrode Resistance (Between diagonally opposing contacts): 2.2 kΩ
4x4 Silicon Array Detectors
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
  • Type: Photodiodes
  • Scan Type & Rate: Area
  • Light Spectrum: VIS,NIR
  • Active Area: 1.96 mm²
  • Capacitance: 75
  • Dimensions: 1.4 x 1.4 mm
Sensors & Detectors Products


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