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metallorganic chemical vapor deposition News
Release process holds promise for GaN semiconductors
TOKYO – Nitride semiconductors grow only on certain surfaces, and their utility is limited by the substrate on which they are fabricated. But a new release process not only makes the method cheaper and easier, it also expands the potential uses of the materials. Yasuyuki Kobayashi and colleagues at Nippon Telegraph and Telephone Corp. (NTT) demonstrated the process with a technique called mechanical transfer using a release layer (MeTRe). They grew a very thin hexagonal layer of boron nitride...
Indium Upped in Nanowire Solar Cell
ALBUQUERQUE, N.M., June 18, 2012 — Growing an indium mixture on a clump of nanowires rather than on a flat surface boosts the percentage of the energy-absorbing material, potentially broadening the solar spectrum that photovoltaic systems can collect.
Release Process Could Broaden Uses of GaN SCs
TOKYO, April 18, 2012 — Nitride semiconductors grow only on certain surfaces, and their utility is limited by the substrate on which they are fabricated. But a new release process not only makes the process cheaper and easier, but also expands the potential uses of the...
Blue LED Order
Apr 12, 2010 — Aixtron AG of Aachen, Germany, has announced that Formosa Epitaxy Inc. of Lung-Tan, Taoyuan, Taiwan, has ordered multiple metallorganic chemical vapor deposition (MOCVD) reactors to be used in the production of ultrahigh-brightness InGaN-based blue...
Aixtron MOCVD Ready for Nitride Production
Jan 4, 2007 — Aixtron said it has installed a metallorganic chemical vapor deposition (MOCVD) system for nitride production, a new 42x2 inch AIX 2800G4 planetary reactor, at a facility in Asia operated by one of its long-term customers. The Germany-based MOCVD...
Photonic Crystals Enable Single-Mode Vertical-Cavity Surface-Emitting Lasers
Jun 1, 2006 — The vertical-cavity surface-emitting laser (VCSEL) has been the subject of intense research since its development in 1977.1 The standard device structure consists of a doped, highly reflective bottom distributed Bragg reflector; an undoped,...
Aixtron Garners Order for MOCVD System
Mar 1, 2005 — Aixtron AG of Aachen, Germany, has received an order from Northrop Grumman Corp. of Los Angeles for a Thomas Swan close-coupled showerhead metallorganic chemical vapor deposition (MOCVD) mass production system. The 7 × 3-in. system will be used at...
InGaN Laser Diodes Grown by Molecular Beam Epitaxy
Mar 1, 2005 — Despite its potential advantages over metallorganic chemical vapor deposition, molecular beam epitaxy has until recently been considered unsuitable for the production of InGaN-based emitters such as blue-violet laser diodes for next-generation...
Chinese Company Buys Veeco's GaN Platform
Dec 1, 2004 — Veeco Instruments Inc. of Somerset, N.J., has sold its TurboDisc D180 GaN metallorganic chemical vapor deposition tool to Beijing Changdian Zhiyuan Optoelectronics Co. Ltd., which is active in the semiconductor packaging industry in China. The...
Improvements Sought in Nitride-Based LEDs
Oct 1, 2004 — A team of engineers at National Cheng Kung University in Tainan, Taiwan, has reported the results of its investigations into the fabrication of InGaN/GaN multiple quantum-well green LEDs by metallorganic chemical vapor deposition. The group hopes...
Veeco Acquires Emcore's Deposition Unit
Feb 1, 2004 — Veeco Instruments Inc. of Woodbury, N.Y., has purchased the TurboDisc metallorganic chemical vapor deposition business of Emcore Corp., based in Somerset, N.J. Combined with Veeco's molecular beam epitaxy unit, the acquisition enables the company to...
(11 results found)
April 2024
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