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Sensors & Detectors
CMOS
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Photodiodes
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42 products
Sensors & Detectors
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BASICevo Broadband Pro NDIR
Electro Optical Components Inc.
Type:
Other
Max. Resolution:
2000
Sensor Width:
37
Sensor Height:
30
Light Spectrum:
MWIR
Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics
Type:
Other
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Tor LW
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Material:
QWIP
NEDT:
25 mk
Operability:
99.95
CIS2020
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
4.2MP
Sensor Width:
2048
Sensor Height:
2048
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono
Dynamic Range:
>90 dB
CIS2521
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
5MP
Sensor Width:
2160
Sensor Height:
2560
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>83.5 dB
S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
1KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
200
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
1024
Pixel Size:
7.8 um x 125 µm
Spectral Response Range:
400-1000 nm
S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 200 µm
Spectral Response Range:
200-1000 nm
Dag MW
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
MWIR
Material:
T2SL
NEDT:
20 mk
Pitch:
15 µm
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB50- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.9 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.1 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
IG22- Extended InGaAs Arrays
Laser Components USA Inc.
Type:
InGaAs
Max. Resolution:
256
Scan Type & Rate:
Linear
kHz at Max. Res.:
4000
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
≥ 2.10 µm
Operating Temperature:
-40 to +50 °C
Pixel Size:
30 x 250 µm
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
CIS1910
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
2.1MP
Sensor Width:
1080
Sensor Height:
1920
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>88 db
FPA0640P15F-17-C
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Array Format:
640 × 512
Package Type:
64-pin Ceramic LCC
Pixel Pitch:
15 μm
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
21.56
Sensor Height:
15.36
Light Spectrum:
UV,VIS,NIR,Multispectral
Breakdown Voltage:
5 V, min.; 25 V typical
Capacitance:
25 nF, typical.; 40 nF, max.
Detection:
Radiation, Electrons, Photons
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
Photodiode - AXUV20A
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
5.5
Sensor Height:
5.5
Light Spectrum:
UV,VIS,NIR
Capacitance:
4 nF, typical.; 10 nF, max.
Circular Photodiode:
5.5 mm²
Detection:
Radiation, Electron, Photon
Photodetector SXUV20C
Opto Diode Corporation
Type:
Other
Light Spectrum:
UV
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Rise Time:
2 µsec
G12230-512WB InGaAs Linear Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
0.5MP
Scan Type & Rate:
Linear
kHz at Max. Res.:
5000
Light Spectrum:
NIR,SWIR
Number of Pixels:
508
Pixel Size:
25 x 250 µm
Spectral Response Range:
0.95-2.15 µm
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
S11963-01CR Distance Image Sensor
Hamamatsu Corporation
Type:
Other
Max. Resolution:
19KP
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR,SWIR
Max. Video Data Rate:
10 MHz
Number of Pixels:
160 x 120
Pixel Size:
30 x 30 µm
S12973-01CT Distance Image Sensor
Hamamatsu Corporation
Type:
Other
Scan Type & Rate:
Linear
kHz at Max. Res.:
5000
Light Spectrum:
VIS,NIR,SWIR
Number of Pixels:
64
Pixel Size:
22 x 50 µm
Spectral Response Range:
440-1000 nm
Nd:YAG 1064-nm Optimized Photodetectors
OSI Optoelectronics Inc.
Type:
IR
Light Spectrum:
VIS,NIR
5 to 14 mm Active area:
diameters
Nd:YAG:
sensitivity
PD4B-80-P50-2G-K
LD4B UAB
Type:
Photodiodes
Light Spectrum:
NIR,SWIR
Bandwidth:
2 GHz
Dark current:
0.01 nA
Responsivity at 1550 nm:
0.85 A/W
Cerium doped Yttrium Aluminum Garnet
Luxium Solutions
Type:
UV
Light Spectrum:
UV
Decay Time (ns):
70
Density (gms/cm3):
4.55
Emission Wavelength (nm):
550
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
LGD Compact
Axetris AG
Type:
IR
Sensor Width:
50
Sensor Height:
163
Light Spectrum:
NIR
Target Gas:
CH4/C2H6
Target Gas:
CH4/CO2
Target Gas:
CH4
SID4-HR High Resolution Wavefront Sensor
Phasics SA
Type:
CCD
Light Spectrum:
VIS,NIR
Curvature Resolution:
< 5.10-4 m-1
Dynamics Range:
> 500 μm
Phase and Intensity sampling:
300 x 400 (>120 000 points)
PbS & PbSe IR Detectors (TO package)
trinamiX GmbH
Type:
IR
Light Spectrum:
NIR
PbS & PbSe Infrared Detectors
trinamiX GmbH
Type:
IR
Light Spectrum:
NIR
IDS3010
attocube systems AG
Type:
Other
GSENSE400BSI-TVISB
Gpixel Inc.
Type:
sCMOS
Max. Resolution:
4MP
Sensor Width:
36.5
Sensor Height:
36.5
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
48
Light Spectrum:
UV,VIS,NIR
Dark Current:
0.03e-@-70C
Dynamic Range:
97.78 dB
Pixel Size:
11 µm
Model 742DP Laser Spot Tracker
Analog Modules Inc.
Type:
Other
Sensor Width:
14
Scan Type & Rate:
Linear
Light Spectrum:
NIR
Dynamic Range:
>100,000:1
Linear Operation:
Up to 10 µW/quadrant
Minimum Signal:
200 nW
High Power Photodetector ARx10-80 Series
APIC Corp.
Type:
InGaAs
Light Spectrum:
NIR
Dark Current:
< 100 nA
Max. Optical Input Power:
100 mW
Responsivity:
> 0.9 A/W
High Linearity Photodetector ARx20-50 Series
APIC Corp.
Type:
InGaAs
Light Spectrum:
NIR
Dark Current:
< 200 nA
Max. Optical Input Power:
70 mW
Responsivity:
< 0.7 A/W
High Bandwidth Photodetector ARx40-25 Series
APIC Corp.
Type:
InGaAs
Light Spectrum:
NIR
Dark Current:
< 200 nA
Max. Optical Input Power:
35 mW
Responsivity:
> 0.55 A/W
Silicon Photomultipliers (SiPMs)
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Series 9 Avalanche Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Wavelenght Range:
750 to 930 nm
Series 6 PIN Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Sensors & Detectors Products
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