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AdTech Ceramics - Ceramic Packages 1-24 LB
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21 products

Illumination

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High-Power GaAIAs IRLED Illuminator - OD-663-850
High-Power GaAIAs IRLED Illuminator - OD-663-850
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 425mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall time: 100 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 5 V
Premier Product
EOC-IRE-2000R Infrared Emitter
EOC-IRE-2000R Infrared Emitter
Electro Optical Components Inc.
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 2000 - 12000
  • Power Output: 1000mW
  • Forward Voltage (V): 90
Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 110mW
  • Half Intensity Beam Angle (degrees): 7
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
High-Power GaAIAs IRLED Illuminator - OD-663
High-Power GaAIAs IRLED Illuminator - OD-663
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 170mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall time: 1 µsec
  • Power Output at 8 A: 3500 mW
  • Reverse Breakdown Voltage: 30 V
Medium-Angle, High-Temp IR Emitter: OD-850LHT
Medium-Angle, High-Temp IR Emitter: OD-850LHT
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 35mW
  • Half Intensity Beam Angle (degrees): 35
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
High Rel Rad-Hard IR Emitter: OD-800W
High Rel Rad-Hard IR Emitter: OD-800W
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 80
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
High Rel Rad-Hard IR Emitter: OD-800L
High Rel Rad-Hard IR Emitter: OD-800L
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 35
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
High Rel Rad-Hard IR Emitter: OD-800F
High Rel Rad-Hard IR Emitter: OD-800F
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 8
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
High-Power GaAlAs IRLED Illuminator: OD-669-850
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 1250mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall Time: 200 nsec
  • Power Dissipation: 6 W
  • Reverse Breakdown Voltage: 30 V
High-Power GaAlAs IRLED Illuminator: OD-669
High-Power GaAlAs IRLED Illuminator: OD-669
Opto Diode Corporation
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 500mW
  • Half Intensity Beam Angle (degrees): 120
  • Capacitance: 11 pF
  • Fall Time: 3 µsec
  • Power Dissipation: 6 W
High-Power GaAlAs IRLED Illuminator: OD-666
High-Power GaAlAs IRLED Illuminator: OD-666
Opto Diode Corporation
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 330mW
  • Half Intensity Beam Angle (degrees): 120
  • Capacitance: 15 pF
  • Fall Time: 2 µsec
  • Power Dissipation: 4 W
High-Power GaAlAs IRLED Illuminator: OD-669-850
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 1250mW
  • Half Intensity Beam Angle (degrees): 120
  • Continuous Forward Current: 370 mA
  • Fall Time: 200 nsec
  • Reverse Breakdown Voltage: 30 V
LedHUB
LedHUB
Omicron-Laserage Laserprodukte GmbH
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Superluminescent (SLED): No
  • Color: Infrared,Visible,Red,Orange,Yellow,Green,Blue,Violet,Ultraviolet
  • Wavelength (nm): 340 - 940
  • Power Output: 2000mW
  • Analogue modulation: 500 kHz
  • Colours: up to six
  • Digital modulation: < 2 µs
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 26mW
  • Half Intensity Beam Angle (degrees): 80
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Wide-Angle, High-Power IR Emitter: OD-850W
Wide-Angle, High-Power IR Emitter: OD-850W
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 40mW
  • Half Intensity Beam Angle (degrees): 80
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 250mW
  • Half Intensity Beam Angle (degrees): 110
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 30 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 30 V
Medium-Angle, High-Power IR Emitter: OD-850L
Medium-Angle, High-Power IR Emitter: OD-850L
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 35mW
  • Half Intensity Beam Angle (degrees): 35
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
High-Power Infrared Emitter: OD-850F
High-Power Infrared Emitter: OD-850F
Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 30mW
  • Half Intensity Beam Angle (degrees): 8
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
L13895-0145G
L13895-0145G
Hamamatsu Corporation
  • Type: Surface Mount
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 1400 - 1500
  • Forward Voltage (V): 1
  • Forward Current: 100mA
  • Operating Temperature (°C): -30 - 85
UV-C LED (CLH-N3S)
UV-C LED (CLH-N3S)
CrayoNano AS
  • Type: Surface Mount
  • TO Package: Other
  • High Power: Yes
  • Superluminescent (SLED): No
  • Color: Ultraviolet
  • Wavelength (nm): 270 - 280
  • Power Output: 100mW
  • Lifetime L70: > 10,000 hours
  • Materials: Quartz Glass
  • Power Output at 500mA: 140 mW
Illumination Products

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